Tesis y Trabajos de Investigación PUCP
URI permanente para esta comunidadhttp://54.81.141.168/handle/123456789/6
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Ítem Texto completo enlazado Deposición mediante pulverización catódica y caracterización de películas delgadas de carburo de silicio (SiC) sobre sustrato de acero(Pontificia Universidad Católica del Perú, 2019-05-06) Tello Suárez, Ernesto Hernán; Rumiche Zapata, Francisco AurelioUna forma de mejorar la resistencia al desgaste de la superficie del acero podría ser a través del recubrimiento de películas delgadas de SiC. El carburo de silicio (SiC), cerámico con excelente dureza, alta resistencia al calor, al desgaste y químicamente inerte a álcalis y ácidos, lo convierten en un material único para la ingeniería y en aplicaciones como recubrimiento. La presente investigación evaluó la deposición de películas delgadas de SiC mediante pulverización catódica (magnetron sputtering RF) y caracterizó estas películas sobre sustratos de acero de bajo carbono A36. Para caracterizar, se usaron técnicas de microscopía electrónica de barrido (SEM) y difracción de rayos X (DRX); y el ensayo de nanoindentación. Un análisis lineal en porcentaje en peso de silicio mediante el SEM corroboró que se depositó el SiC. La DRX confirmó la naturaleza amorfa de los recubrimientos de SiC depositados a baja temperatura y a baja presión. Al no tener calentamiento externo el sustrato de acero, no se pudo incrementar la difusión en el crecimiento de la película delgada de SiC. Los tratamientos térmicos de recocido a temperaturas de 800 °C, 865 °C, 1000 °C y 1300 °C no lograron la formación y crecimiento de fases cristalinas de SiC. Los ensayos de nanoindentación de las muestras sin recocido (8,7 GPa) y recocida a 800 °C (13,9 GPa) de las películas de SiC resultaron con mejor dureza frente a las durezas obtenidas de sus sustratos de acero (4,0 GPa y 1,0 GPa). Asimismo, la reducción en la rigidez de la película de SiC recocida fue sólo un 2,7% ó 2,28 GPa, manteniendo su rigidez a altas temperaturas (recocido a 800°C por 90 minutos); sin embargo, su dureza se incrementó en un 59,7% originando un recubrimiento más frágil. Esta investigación debería propiciar otras investigaciones, al considerar que hay otras variantes de la deposición por pulverización catódica que permiten calentar el sustrato a diferentes temperaturas y/o variar la potencia utilizada para la deposición y/o realizar diferentes mezclas de los gases y/o variar las presiones parciales de los gases; etc.Ítem Texto completo enlazado Preparation and characterization of sputtered hydroxyapatite thin films(Pontificia Universidad Católica del Perú, 2018-01-19) Ugarte Díaz, Jorge Alfonso; Grieseler, Rolf; Schaaf, Peter; Rumiche Zapata, Francisco AurelioIn this work, hydroxyapatite (HAp) thin films were fabricated using two different sputtering techniques: Radio frequency magnetron sputtering and ion beam sputtering. In the first case, the films were grown on Ti-6Al-4V substrates using a high-purity commercial HAp target, obtaining a thickness ~200 nm. For the second method, the film were grown on pure titanium substrates using a self-produced HAp target. This target was fabricated with powders (Ca/P = 1.628, sintered and crushed). Here, the thickness of the fabricated film was ~300 nm. The sintering tests for the target fabrication were carried out using two different heating regimens at a maximum temperature of 1200 °C (holding time of 2h and 4h) using various additives. As additives, water (H2O), polyvinyl alcohol (PVA) and polyethylene glycol (PEG) were used to improve the mechanical strength of the green discs. The as-deposited films were amorphous in both cases. Therefore, the films were annealed to increase the crystallinity. Annealing was performed in air for 2h at temperatures: 400, 600 and 800 °C for RF-magnetron sputter samples; 600 and 800 °C for ion beam sputter samples. The result of the films shows in both cases that the crystallinity of HAp was improved only for the annealed samples fabricated with ion beam sputtering at 800 °C. In both cases energy dispersive X-ray spectroscopy measurements show a decrease in Ca/P ratio with increasing the temperature. Hardness results revealed an increase in this with the increase in temperature possibly due to the formation of titanium oxide. The roughness for the fabricated films with the RFmagnetron sputtering increases till an annealing temperature of 600 °C and then decreases till 800 °C, while the roughness for the fabricated films with ion beam sputtering is higher in the as-deposited samples and then this is reduced by increasing the annealing temperature.Ítem Texto completo enlazado FEM simulation of residual stresses of thin films for applications in MEMS(Pontificia Universidad Católica del Perú, 2017-06-19) Macavilca Román, José Carlos; Ströhla, Tom; Rumiche Zapata, Francisco AurelioIn MEMS sensors, such as resonators based on cantilever and doubly-clamped beams, the presence of residual stresses in the thin films disrupt their mechanical properties or eigenfrequencies and, in some cases, can destroy the structure. This thesis aims to simulate the residual stresses in wafers composed of thin films deposited over a substrate. The simulations were conducted with ANSYS Workbench R17.2, a finiteelement-method software. This work considered static simulations with a single-layer wafer geometry, since it is a first approach to the simulation of residual stresses. With the purpose of achieving that, three simulation types were performed. Simulation 1 applied the thermal loads as heating and cooling steps to a quadrant model. Simulation 2 added the birth and death technique with the purpose of representing the deposition of the thin film. Besides, it was split under the geometric model as flat axisymmetric section, curved axisymmetric section, i.e. with the initial curvature of the wafer, and curved quadrant model. On the other hand, simulation 3 generated the residual stresses by the activation of the contact between the thin film and the silicon dioxide layer, used as diffusive barrier. The simulation results were compared to calculated values from measurements performed by the methods of wafer curvature and X-ray diffraction. The comparison showed that the curved quadrant model allowed obtaining residual stresses and deflections closer to the calculated ones. In addition, the curved axisymmetric models allowed visualizing the residual stresses distribution in the layers and the substrate. Thus, the birth and death technique was useful to simulate the deposition of the thin film. The considerations described in this work can be used as input data for more complex simulations based on MEMS structuresÍtem Texto completo enlazado Construction and implementation of a 4-probe measuring system to determinate the temperature dependent sheet resistance of thin films(Pontificia Universidad Católica del Perú, 2017-04-12) Pacheco Arenas, Carlos Arturo; Ströhla, Tom; Rumiche Zapata, Francisco AurelioIn order to build machines, electronic devices, it is necessary to know all properties of the materials. The machines and electronic devices use parts that are interconnected, the mechanical properties are important, but for some specific tasks the electrical properties are more important. In this sense it is necessary to predict the behavior of this parts in different temperatures to the environment. The present thesis focus on implementation of a 4-probe measuring system to determinate the sheet resistance of thin film samples showing the dependency of the resistivity on the film thickness as well as on the deposition temperature. The method used to determine the resistivity is the modified van der Pauw Method. Therefore, it is important the measurement of the current and the voltage drop in the sample. It is also important to measure the distance between tips, in order to calculate the resistivity. Furthermore, it is also important to find the correct transformation that maps any four point of a plane to a new plane with four collinear points. The measurements are controlled via LabVIEW and the measured data is displayed in the user interface.