Tesis y Trabajos de Investigación PUCP
URI permanente para esta comunidadhttp://54.81.141.168/handle/123456789/6
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Ítem Texto completo enlazado On the optoelectronic properties of sputtered aluminium doped zinc oxide: a critical assessment(Pontificia Universidad Católica del Perú, 2024-10-09) Enrique Morán, Luis Alonso; Guerra Torres, Jorge AndrésEn este trabajo, películas delgadas de óxido de zinc dopado con aluminio (AZO) con diferentes concentraciones de aluminio (Al) fueron crecidas por pulverización catódica de radiofrecuencia y luego fueron calentadas a 400°C en una atmósfera de Argón. El espectro de absorción del óxido de zinc (ZnO) exhibe una contribución de la absorción excitónica a la absorción fundamental que típicamente no es considerada en ZnO dopado con Al. No obstante, se muestra que la banda de excitones libres es aún visible en AZO con bajas concentraciones de Al. Adicionalmente, los estados de defectos, inducidos por el dopaje, incrementan el tamaño de los estados de cola. Estos dos factores, estados de cola y bandas de excitones libres, tienen un efecto substancial en los valores del ancho de banda óptico determinado a partir de la absorción fundamental y deben ser tomados en cuenta con modelos adecuados. En este trabajo, usamos un modelo recientemente desarrollado basado en el modelo de dispersión óptico de Elliot para determinar con precisión el ancho de banda óptico, la energía de ligadura de los excitones y la energía de Urbach de películas delgadas de AZO. Por otro lado, analizamos la absorción de portadores de carga libres, la cual es típicamente modelada por el modelo de dispersión de Drude. Sin embargo, este último no toma en cuenta el hecho de que los centros de dispersión también interactúan con el campo eléctrico externo. Para considerar este efecto, varios modelos han sido propuestos para analizar la resistividad dinámica del material. Típicamente, la resistividad dinámica tiene una dependencia exponencial y un valor de -1.5 es asumido para semiconductores altamente dopados. En este trabajo, dejamos este parámetro libre obteniendo una mejor descripción de los portadores de carga libres y su variación con el dopaje de aluminio.Ítem Texto completo enlazado On the fundamental absorption of excitonic and non-excitonic semiconductors: an optoelectronic and thermal approach(Pontificia Universidad Católica del Perú, 2023-08-28) Lizárraga Olivares, Kevin Angello; Guerra Torres, Jorge AndrésIn thepresent work, we study the optical properties of semiconductors near the fundamental absorption taking into account disorder induced tail states. In particular, we pay special attention to GAAs and lead halide perovskites. We address existing models for the description of the absorption spectra, and extend them in the band fluctuations framework. We start with traditional semiconductors where we have developed our models inspired in Jellison-Modine procedure (Tauc-Lorentz model).These models are tested on direct,indirect and amorphous band gap materials such as the ones of the group III −V family. Later, we continue the discussion with the inclusion of the Sommerfeld enhancement factor for understanding the nature of excitonic semiconductors. Here, the Elliott model is modified through the band fluctuations procedure in order to obtain an analytic expression for the imaginary part of the electrical permittivity. This new model accurately describes the band gap and binding energy of systems like GaAs,MAPbBr3, MAPbI3 and MAPbI3−xClx. Furthermore,the impact of the sample temperature on optical parameters such as the band gap can provide information regarding the thermal expansion and th eelectron-phon on interaction in the solid. In particular,if the material exhibits a high electron-phon on coupling,like in the cases of the polar semiconductors, the model describing the exciton can no longer rely on the Hydrogen-like picture, but instead it must be computed with a theory considering exciton-polarons. In the latter case, the exciton is dressed by a cloudofphonons that lower its binding energy. Remarkably, our model for excitonic materials correctly predicts the exciton-polaron binding energies of lead halide perovskites andt heir carrier’s effective massees. Lastly, we emphasize the powerful relation between the optical properties and the thermal properties. Notably, we found a good agreement among our predicted expressions,using the Debye’s model, with other specific heat experimental results.Ítem Texto completo enlazado Funcionalización de compositos poliméricos a través de recubrimientos de óxido de zinc dopado con aluminio depositados por pulverización catódica de radio frecuencia(Pontificia Universidad Católica del Perú, 2021-01-21) Sánchez Sifuentes, Ana Cristina Midori; Guerra Torres, Jorge AndrésEn este trabajo de tesis se evalúa la capacidad de depositar películas delgadas de óxido de zinc dopado con aluminio sobre sustratos poliméricos flexibles impresos en 3D. Se presentan los resultados de la caracterización óptica, eléctrica y estructural de las películas delgadas de óxido de zinc dopado con aluminio depositadas sobre sustratos con diferentes niveles de flexibilidad. El objetivo es evaluar la capacidad de la película delgada de mantener sus propiedades electrónicas sobre estos sustratos flexibles incluso después de ser activado térmicamente. Para esto, las muestras son caracterizadas óptica y electrónicamente después de ser activadas a través de tratamientos térmicos de hasta 260°C. Los resultados de las películas con sustrato polimérico se comparan con los de una película depositada sobre sílica fundida. El principal resultado de este estudio sistemático es el comportamiento de la conductividad del óxido de zinc dopado con aluminio en función de la flexibilidad del material del sustrato.Ítem Texto completo enlazado Optical and luminiscent properties of terbium / ytterbium doped aluminum oxynitride and terbium doped aluminum nitride thin films(Pontificia Universidad Católica del Perú, 2020-08-06) Tucto Salinas, Karem Yoli; Guerra Torres, Jorge Andrés; Grieseler, RolfIn the present thesis the optical and light emission properties of two systems consisting of Tb3+ and Yb3+ doped amorphous AlOxNy thin films and Tb3+ doped polycrystalline AlN thin films were analyzed. In the two ions system, to obtain an adequate luminescent emission, commonly a significant effort must be made to find a suitable concentration of dopants and elemental composition of the host material. An interesting and highly efficient method is a combinatorial approach, allowing a high velocity screening of a wider range of properties. In the present work a combinatorial gradient based thin film libraries of amorphous AlOxNy:Yb3+, AlOxNy:Tb3+ and AlOxNy:Tb3+:Yb3+ have been prepared by radio frequency co-sputtering from more than one target. In the prepared libraries, the Tb and Yb concentration range spreads along with the oxygen to nitrogen ratio of the host matrix all over the substrate area. Concentrations ranges for each ion were established for producing high emission intensity samples, along with an analysis of the light emission features of Yb3+ ions with Tb3+ ions as sensitizers for cooperative down conversion process. Using different annealing temperatures the activation energy of the rare earth ions and thermal-induced activation mechanisms are evaluated. Here we show that the different oxygen to nitrogen ratios in the host composition affect the light emission intensity. According to experimental results, there is a strong enhancement of the Yb3+ related emission intensity over the Tb3+ emission in codoped films with Tb:Yb concentration ratios near to 1:2, at 850°C. Thus, suggesting the sensitization of Tb3+ ions through an AlOxNy matrix and the cooperative energy transfer between Tb3+ and Yb3+ ions as the driven mechanism for down conversion process with promising applications in silicon solar cells. At the end of this first part, the optimal elemental composition and optimal annealing temperature in the investigated ranges to achieve the highest Yb3+ emission intensity upon sensitization of Tb3+ ions is reported. The second system studied consists of Tb3+ doped AlN layers prepared by reactive magnetron sputtering and analyzed using the conventional one at a time approach. In this work, two types of thermal treatments have been applied: substrate heating during deposition of the films and post deposition rapid thermal annealing, with varying temperature from non intentional heating up to 600°C. The composition, morphology and crystalline structure of the films under different thermal processes and temperatures were investigated along with their optical and light emission properties, with the aim of maximizing the Tb3+ emission intensity. The polycrystalline nature of the films was confirmed by X-ray diffraction under grazing incidence, and the influence of substrate temperature on the crystalline structure was reported. Atomic force microscopy and scanning electron microscopy has revealed the smooth grainy surface quality of the AlN:Tb3+ films. The highest Tb3+ photoluminescence emission intensity was achieved in the film treated with rapid thermal annealing process. For a more detailed study of the post deposition annealing treatments, temperature was further increased up to 900°C, and the influence of annealing temperature on the emission properties was investigated by photoluminescence and photoluminescence decay measurements. An increase in the photoluminescence intensity and photoluminescence decay time was observed upon annealing for the main transition of Tb3+ ions at 545 nm, which was attributed to a decrease of non radiative recombination and increase of the population of excited Tb3+ ions upon annealing. Additionally, using the characterized films as active layer, direct current and alternate current thin film electroluminescence devices were designed and investigated.