Analytical Study of the Thermal Activation of Tb Doped Amorphous SiC:H Thin Films

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dc.contributor.affiliationPontificia Universidad Católica del Perú. Departamento de Ciencias
dc.contributor.authorGuerra Torres, J.A.
dc.contributor.authorTucto, K.
dc.contributor.authorMontañez, L.M.
dc.contributor.authorDe Zela, F.
dc.contributor.authorTöfflinger, J.A.
dc.contributor.authorWinnacker, A.
dc.contributor.authorWeingärtner, R.
dc.date.accessioned2026-03-13T17:00:56Z
dc.date.issued2016
dc.description.abstractThe luminescence of Tb-doped a-SiC:H thin films with different Tb concentrations under sub-bandgap photon excitation was investigated. Two independent processes were identified. The annealing induced activation of the Tb3+ and the inhibition of host-mediated non-radiative recombination paths. The integrated emission intensity is described by a rate equation model, considering these two. In this study, the luminescence enhancement with increasing annealing temperature is shown. The optimal Tb concentration and annealing temperature for the highest Tb-related light emission intensity is determined. Finally, a parameter proportional to the number of optically active ions is found through the aforementioned model.
dc.description.sponsorshipFunding: This research was funded by the Research Management Office (DGI) of the Pontificia Universidad Católica del Perú (PUCP). The authors have been supported by the PUCP under the PhD scholarship program Huiracocha (J.A. Guerra), the “Programa de repatriación” (J.A. Töfflinger), the Master scholarship (L.M. Montañez and K. Tucto) from CONCYTEC and the “Círculo de investigación” from CONCYTEC. The authors would like to thank Prof. Dr. A. R. Zanatta (IFSC-USP, Brazil) for providing access to his lab in order to perform the PL measurements and Prof. Dr. H. P. Strunk (University of Stuttgart, Germany) for helping us with the PLE measurements.
dc.identifier.doihttps://doi.org/10.1557/adv.2016.464
dc.identifier.urihttp://hdl.handle.net/20.500.14657/206806
dc.language.isoeng
dc.publisherMaterials Research Society
dc.relation.conferencenameMRS Advances; Vol. 1, Núm. 38 (2016)
dc.relation.ispartofurn:issn:2059-8521
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectMaterials science
dc.subjectLuminescence
dc.subjectAnnealing (glass)
dc.subjectDoping
dc.subjectAmorphous solid
dc.subjectThin film
dc.subjectRadiative transfer
dc.subjectExcitation
dc.subjectIon
dc.subjectEmission intensity
dc.subjectOptoelectronics
dc.subjectBand gap
dc.subjectAnalytical Chemistry (journal)
dc.subjectNanotechnology
dc.subjectOptics
dc.subjectComposite material
dc.subjectCrystallography
dc.subject.ocdehttps://purl.org/pe-repo/ocde/ford#1.03.06
dc.titleAnalytical Study of the Thermal Activation of Tb Doped Amorphous SiC:H Thin Films
dc.typehttp://purl.org/coar/resource_type/c_5794
dc.type.otherComunicación de congreso
dc.type.versionhttps://vocabularies.coar-repositories.org/version_types/c_970fb48d4fbd8a85/

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