Analytical Study of the Thermal Activation of Tb Doped Amorphous SiC:H Thin Films
Loading...
Date
Journal Title
Journal ISSN
Volume Title
Publisher
Materials Research Society
Acceso al texto completo solo para la Comunidad PUCP
Abstract
The luminescence of Tb-doped a-SiC:H thin films with different Tb concentrations under sub-bandgap photon excitation was investigated. Two independent processes were identified. The annealing induced activation of the Tb3+ and the inhibition of host-mediated non-radiative recombination paths. The integrated emission intensity is described by a rate equation model, considering these two. In this study, the luminescence enhancement with increasing annealing temperature is shown. The optimal Tb concentration and annealing temperature for the highest Tb-related light emission intensity is determined. Finally, a parameter proportional to the number of optically active ions is found through the aforementioned model.
Description
Keywords
Materials science, Luminescence, Annealing (glass), Doping, Amorphous solid, Thin film, Radiative transfer, Excitation, Ion, Emission intensity, Optoelectronics, Band gap, Analytical Chemistry (journal), Nanotechnology, Optics, Composite material, Crystallography