Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb3+thin films prepared by radio frequency magnetron sputtering

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dc.contributor.affiliationPontificia Universidad Católica del Perú. Departamento de Ciencias
dc.contributor.authorTucto, K.
dc.contributor.authorFlores Escalante, L.
dc.contributor.authorGuerra Torres, J.A.
dc.contributor.authorGrieseler, R.
dc.contributor.authorKups, T.
dc.contributor.authorPezoldt, J.
dc.contributor.authorOsvet, A.
dc.contributor.authorBatentschuk, M.
dc.contributor.authorWeingärtner, R.
dc.date.accessioned2026-03-13T16:59:05Z
dc.date.issued2017
dc.description.abstractTerbium-doped aluminum nitride thin films have been deposited by radio frequency magnetron sputtering. The influence of annealing treatments on structural, morphological and luminescence properties of the films is examined with the aim to optimize post-deposition annealing conditions. Temperatures starting from 500 up to 1000°C using two annealing techniques were investigated: rapid thermal processing and quartz tube furnace. X-ray diffraction analysis revealed the formation of aluminum oxide and aluminum oxynitride phases at temperatures higher than 750°C. The oxygen content in the surface layer was measured with energy dispersive X-ray. The terbium emission was obtained after excitation either by photons or electrons. The films treated with rapid thermal processing at 750°C resulted in the highest emission.
dc.description.sponsorshipFunding: This work was funded by the Peruvión Science foundatión FONDECYT under the projects “Círculos de investigación en Ciencia y tecnología-2”, contract number 011-2014 and under the cooperatión project with the German academic exchange service (DAAD), contract number 035-2016. The authors also gratefully acknowledge the support of Karem Tucto and Loreleyn Flores by CONCYTEC under the contract numbers 012-2013-FONDECYT and 000236-2015-FONDECYTDE, respectivley.
dc.identifier.doihttps://doi.org/10.4028/www.scientific.net/MSF.890.299
dc.identifier.urihttp://hdl.handle.net/20.500.14657/206164
dc.language.isoeng
dc.publisherTrans Tech Publications Ltd
dc.relation.conferencenameMaterials Science Forum; Vol. 890 MSF (2017)
dc.relation.ispartofurn:issn:1662-9752
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectTerbium-doped aluminum nitride
dc.subjectAnnealing treatments
dc.subjectLuminescence properties
dc.subject.ocdehttps://purl.org/pe-repo/ocde/ford#1.03.02
dc.titleEffect of post-annealing treatment on the structure and luminescence properties of AIN: Tb3+thin films prepared by radio frequency magnetron sputtering
dc.typehttp://purl.org/coar/resource_type/c_5794
dc.type.otherComunicación de congreso
dc.type.versionhttps://vocabularies.coar-repositories.org/version_types/c_970fb48d4fbd8a85/

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