Hydrogen effects at sputtered Tb-doped AlNxOy:H / c-Si(p) interfaces: A transient surface photovoltage spectroscopy study

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dc.contributor.affiliationPontificia Universidad Católica del Perú. Departamento de Ciencias
dc.contributor.authorDulanto, J.
dc.contributor.authorFengler, S.
dc.contributor.authorSevillano-Bendezú, M.A.
dc.contributor.authorGrieseler, R.
dc.contributor.authorGuerra Torres, J.A.
dc.contributor.authorTöfflinger, J.A.
dc.contributor.authorDittrich, T.
dc.date.accessioned2026-03-13T17:00:49Z
dc.date.issued2022
dc.description.abstractIn the present work, we studied the interface of terbium doped aluminum oxynitride (Tb-doped AlNxOy:H) deposited under different hydrogen flows with p-type doped crystalline silicon by applying transient surface photovoltage spectroscopy. We observed strong accumulation with concomitant passivation of boron acceptors in the crystalline silicon and defect generation near the interface. With increasing hydrogen flows, the net negative charge in the Tb-doped AlNxOy:H layer decreased, surface photovoltage signals related to defects increased, surface photovoltage transients decayed faster, and the slowest relaxation of charge carriers separated in space changed from trap limited to hopping transport via an exponential distribution of trap states in energy.
dc.description.sponsorshipFunding: S. Fengler is grateful to the BMWi for funding ( AiF-ZIM: KK5123601DF0 ). J. Dulanto and J. A. Töfflinger are grateful for the financial support provided by the Peruvian PROCIENCIA (Contract N°124–2018-FONDECYT). J. Dulanto has been supported by the Huiracocha Scholarship of the PUCP.
dc.identifier.doihttps://doi.org/10.1016/j.tsf.2022.139474
dc.identifier.urihttp://hdl.handle.net/20.500.14657/206751
dc.language.isoeng
dc.publisherElsevier
dc.relation.ispartofurn:issn:0040-6090
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.sourceThin Solid Films; Vol. 759 (2022)
dc.subjectSurface photovoltage
dc.subjectDoping
dc.subjectPassivation
dc.subjectMaterials science
dc.subjectSilicon
dc.subjectDepletion region
dc.subjectDeep-level transient spectroscopy
dc.subjectHydrogen
dc.subjectAnalytical Chemistry (journal)
dc.subjectCrystalline silicon
dc.subjectCharge carrier
dc.subjectChemistry
dc.subjectSpectroscopy
dc.subjectOptoelectronics
dc.subjectLayer (electronics)
dc.subjectSemiconductor
dc.subjectNanotechnology
dc.subject.ocdehttps://purl.org/pe-repo/ocde/ford#2.03.00
dc.titleHydrogen effects at sputtered Tb-doped AlNxOy:H / c-Si(p) interfaces: A transient surface photovoltage spectroscopy study
dc.typehttp://purl.org/coar/resource_type/c_6501
dc.type.otherArtículo
dc.type.versionhttps://vocabularies.coar-repositories.org/version_types/c_970fb48d4fbd8a85/

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