Electrically tunable silicon-organic metasurface as demultiplexer for wavelength-division multiplexing systems
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SPIE
Acceso al texto completo solo para la Comunidad PUCP
Abstract
Through numerical simulations, we have demonstrated the electrical tunability of a silicon–organic metasurface that may be useful for optical-communication systems with wavelength-division multiplexing. We began with a nonintuitive geometry and performed topological optimization of a meta-atom comprising a 20 × 20 -variable silicon-on-insulator grid, with electrical tunability arising from a stable electro-optic polymer named JRD1. The controlling electric potential was taken to be applied via two electrodes made of indium-doped tin oxide. A tunability rate of 0.55 nm V − 1 in the optical-communication E and S bands was predicted, with the inter-channel crosstalk between adjacent channels ranging from 6 to 14 dB for 45 deg angle of incidence. The proposed metasurface should perform robustly with respect to the variation of the angle of incidence.
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Silicon–organic metasurface, Wavelength-division multiplexing, Topological optimization
