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Contribution to the Tb-doped AlNxOy:H/c-Si(p) interface study using Surface Photovoltage (SPV) techniques for potential photovoltaic applications
(Pontificia Universidad Católica del Perú, 2023-07-10)
Hydrogenated Aluminum Oxynitride (AlNxOy:H) is a versatile material for the surface passivation of crystalline silicon (c-Si). The capability of having positive or negative fixed charges makes AlNxOy:H a suitable material ...
Comparison and evaluation of measured and simulated high-frequency capacitance-voltage curves of MOS structures for different interface passivation parameters
(Pontificia Universidad Católica del Perú, 2019-06-27)
Semiconductor-insulator interfaces play an important role in the performance of
many different electronic and optoelectronic devices such as transistors, LEDs, lasers
and solar cells. Particularly, the recombination of ...