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Comparison and evaluation of measured and simulated high-frequency capacitance-voltage curves of MOS structures for different interface passivation parameters
(Pontificia Universidad Católica del Perú, 2019-06-27)
Semiconductor-insulator interfaces play an important role in the performance of
many different electronic and optoelectronic devices such as transistors, LEDs, lasers
and solar cells. Particularly, the recombination of ...
Contribution to the Tb-doped AlNxOy:H/c-Si(p) interface study using Surface Photovoltage (SPV) techniques for potential photovoltaic applications
(Pontificia Universidad Católica del Perú, 2023-07-10)
Hydrogenated Aluminum Oxynitride (AlNxOy:H) is a versatile material for the surface passivation of crystalline silicon (c-Si). The capability of having positive or negative fixed charges makes AlNxOy:H a suitable material ...