Ingeniería y Ciencia de los Materiales
URI permanente para esta colecciónhttp://54.81.141.168/handle/123456789/31431
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Ítem Texto completo enlazado On the fundamental absorpion of amorphous semiconductors(Pontificia Universidad Católica del Perú, 2016-06-20) Angulo Abanto, José Rubén; Guerra Torres, Jorge AndrésThe present thesis reviews different models that describe the fundamental absorption of amorphous semiconductors. These models make use of the electronic density of states to shape the absorption coefficient in the fundamental absorption region. The study focuses on the optical absorption of hydrogenated amorphous Silicon (a-Si:H), hydrogenated and non-hydrogenated amorphous silicon carbide (a-SiC:Hx), and silicon nitride (a-SiN) thin films. On the one hand, parameters like the Tauc-gap and Urbach energy are obtained from the absorption coefficient using the traditional models. On the other hand, a recently proposed model based on band thermal fluctuations was assessed [1]. This model allows a determination of the mobility gap and the Urbach energy from a single fit of the absorption coefficient without the need of identifying the Tauc region beforehand. Furthermore, it is able to discriminate the variation of the Urbach energy from the bandgap. The results allow the evaluation of the aforementioned parameters with annealing treatments at different temperatures. The mobility edges are insensitive to the structural disorder by at least one degree lower than the Urbach energy. This work demonstrates that it is possible to obtain the mobility edge through this model. In addition, the measured Tauc-gap and Urbach energy exhibit a strong linear correlation following the Cody model for all three materials. Finally, the Urbach focus concept is evaluated and estimated under different analysis.Ítem Texto completo enlazado Structural, luminescence and Judd-Ofelt analysis to study the influence of post-annealing treatment on the AIN:Tb thin films prepared by radiofrequency magnetron sputtering(Pontificia Universidad Católica del Perú, 2016-06-20) Tucto Salinas, Karem Yoli; Weingärtner, RolandThis thesis investigates the effects of the annealing treatments on the spontaneous emission, radiative lifetime, composition and structure of terbium doped aluminum nitride films deposited on silicon substrates by radio frequency magnetron sputtering. The purpose of this thesis is to determine the Judd-Ofelt intensity parameters from the emission spectrum, in order to calculate the radiative lifetime, branching ratios and spontaneous emission probability. The optimal annealing temperature for the emission of terbium doped aluminum nitride is investigated. The annealing treatment was performed in the temperature range starting from 500 up to 1000°C. Two annealing techniques were investigated: rapid thermal processing and a rather slower quartz tube furnace. Furthermore, two heating approaches were applied: direct heating at 500, 750, 900 and 1000 °C, and multistep heating of 500-750°C, 750-900°C and 900-1000°C. The film was then characterized to determine which conditions resulted in the highest emission of Tb. The film characterization includes the use of X-ray diffraction to study the film’s crystal orientation, Energy dispersive X-ray spectroscopy to determine the film composition, Scanning electron microscopy and Reflection high-energy electron diffraction to resolve the surface morphology and structure of the film respectively. The luminescent intensity and the radiative lifetime were analyzed using cathodoluminescence measurement and Judd-Ofelt analysis. This work shows that the activation of the Tb ions to enhance the emitted cathodoluminescence intensity depends on the structure of the film and the oxygen concentration. The best annealing temperature to produce the highest emitted light intensity in this set of experiments were the single-step heating at 750°C using rapid thermal processing.